Strained silicon heterostructures : materials and devices /
edited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.
- London : Institution of Electrical Engineers, c2001.
- xii, 496 p. : ill. ; 25 cm.
- IEE circuits, devices and systems series 12 .
- IEE circuits, devices and systems series ; 12. .
Includes bibliographical references and index.
Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
9780852967782 0852967780
2014395719
GBA0V2612 bnb
010350839 Uk
Heterostructures.
Silicon.
Heterostructures.
Silicon.
Heterostruktur.
Silicium.
QC611.8.S5 / S77 2001
621.38152 620.193 / STR
Includes bibliographical references and index.
Introduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
9780852967782 0852967780
2014395719
GBA0V2612 bnb
010350839 Uk
Heterostructures.
Silicon.
Heterostructures.
Silicon.
Heterostruktur.
Silicium.
QC611.8.S5 / S77 2001
621.38152 620.193 / STR