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Wide band gap semiconductor nanowires, 2 : Heterostructures and optoelectronic devices / (Record no. 207651)

000 -LEADER
fixed length control field 05926cam a2200685Ii 4500
001 - CONTROL NUMBER
control field ocn889949229
003 - CONTROL NUMBER IDENTIFIER
control field OCoLC
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20171026112114.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu---unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 140904s2014 enka ob 000 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781118984277
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 1118984277
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781118984291
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 1118984293
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 1848216874
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781848216877
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781848216877
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier CHBIS
System control number 010259752
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier CHVBK
System control number 325941653
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier DEBSZ
System control number 431746052
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier GBVCP
System control number 81486693X
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier NZ1
System control number 15908974
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier DEBBG
System control number BV043397097
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)889949229
Canceled/invalid control number (OCoLC)887507338
-- (OCoLC)961660923
-- (OCoLC)962720855
040 ## - CATALOGING SOURCE
Original cataloging agency DG1
Language of cataloging eng
Description conventions rda
-- pn
Transcribing agency DG1
Modifying agency N$T
-- YDXCP
-- OHI
-- EBLCP
-- IDEBK
-- CDX
-- E7B
-- VRC
-- RECBK
-- DEBSZ
-- COO
-- OCLCQ
-- DEBBG
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7874.85
Item number .W53 2014
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 009070
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381045
Edition number 23
245 00 - TITLE STATEMENT
Title Wide band gap semiconductor nanowires, 2 : Heterostructures and optoelectronic devices /
Statement of responsibility, etc. edited by Vincent Consonni, Guy Feuillet.
Medium [electronic resource]
246 30 - VARYING FORM OF TITLE
Title proper/short title Heterostructures and optoelectronic devices
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture London, UK :
Name of producer, publisher, distributor, manufacturer ISTE,
Date of production, publication, distribution, manufacture, or copyright notice 2014.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource :
Other physical details illustrations (black and white).
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement Electronics engineering series
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Cover; Title Page; Copyright; Contents; Preface; Part 1: GaN and ZnO Nanowire Heterostructures; Chapter 1: AlGaN/GaN Nanowire Heterostructures ; 1.1. A model system for AlGaN/GaN heterostructures; 1.2. Axial AlGaN/GaN nanowire heterostructures; 1.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures; 1.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures; 1.2.3. Lateral internal electric fields; 1.2.4. Axial internal electric fields; 1.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks; 1.2.6. Electrical transport properties.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 1.3. AlGaN/GaN core-shell nanowire heterostructures1.3.1. Structural properties; 1.3.2. Optical characteristics; 1.3.3. Electronic properties; 1.3.4. True one-dimensional GaN quantum wire (QWR) second-order self-assembly; 1.4. Application examples; 1.4.1. AlGaN/GaN NWH optochemical gas sensors; 1.4.2. AlGaN/GaN nanowire heterostructure resonant tunneling diodes; 1.5. Conclusions; 1.6. Bibliography; Chapter 2: InGaN Nanowire Heterostructures; 2.1. Introduction; 2.2. Self-assembled InGaN nanowires; 2.3. X-ray characterization of InGaN nanowires.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 2.4. InGaN nanodisks and nanoislands in GaN nanowires2.5. Selective area growth (SAG) of InGaN nanowires; 2.6. Conclusion; 2.7. Bibliography; Chapter 3: ZnO-Based Nanowire Heterostructures; 3.1. Introduction; 3.2. Designing ZnO-based nanowire heterostructures; 3.3. Growth of ZnxMg1-xO/ZnO core-shell heterostructures by MOVPE; 3.4. Misfit relaxation processes in ZnxMg1-xO/ZnO core-shell structures; 3.5. Optical efficiency of core-shell oxide-based nanowire heterostructures; 3.6. Axial nanowire heterostructures; 3.7. Conclusions and perspectives; 3.8. Bibliography.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note Chapter 4: ZnO and GaN Nanowire-based Type II Heterostructures4.1. Semiconductor heterostructures; 4.2. Type II heterostructures; 4.3. Optimal device architecture; 4.4. Electronic structure of type II core-shell nanowires; 4.5. Synthesis of the type II core-shell nanowires and their signatures; 4.6. Demonstration of type II effects in ZnO-ZnSe core-shell nanowires and photovoltaic devices; 4.7. Summary; 4.8. Acknowledgments; 4.9. Bibliography; Part 2: Integration of GaN and ZnO Nanowires in Optoelectronic Devices; Chapter 5: Axial GaN Nanowire-based LEDs; 5.1. Introduction.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 5.2. Top-down GaN-based axial nanowire LEDs5.2.1. Fabrication of top-down GaN-based axial nanowires; 5.2.2. Device fabrication of axial nanowire LEDs; 5.2.3. Performance characteristics of top-down axial nanowire LEDs; 5.3. Bottom-up GaN-based axial nanowire LEDs; 5.3.1. Growth techniques; 5.3.2. Doping, polarity and surface charge properties; 5.3.3. Design and typical performance of bottom-up axial nanowire LEDs; 5.3.3.1. Disk/well-in-a-wire LEDs; 5.3.3.2. Double heterostructure nanowire LEDs; 5.3.3.3. Dot-in-a-wire nanowire LEDs; 5.3.3.4. Polarization-induced p-n junction nanowire LEDs.
520 ## - SUMMARY, ETC.
Summary, etc. This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and.
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note Print version record.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optoelectronic devices.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanowires.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Mechanical.
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanowires.
Source of heading or term fast
Authority record control number (OCoLC)fst01032641
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optoelectronic devices.
Source of heading or term fast
Authority record control number (OCoLC)fst01046908
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
655 #0 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Consonni, Vincent,
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Feuillet, Guy,
Relator term editor.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
Title Wide band gap semiconductor nanowires
International Standard Book Number 9781848215979
Record control number (OCoLC)870426617
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Electronics engineering series (London, England)
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://onlinelibrary.wiley.com/book/10.1002/9781118984291
Public note Wiley Online Library
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Koha item type Books

No items available.

Last Updated on September 15, 2019
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