The Physics of hydrogenated amorphous silicon /
by Joannopoulos, J. D. (John D.); Lucovsky, G; Carlson, D. E. (David Emil).
Material type:
Incomplete contents:
1. Structure, preparation, and devices -- 2. Electronic and vibrational properties.
Item type | Current location | Collection | Call number | Status | Date due | Barcode |
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Dhaka University Science Library General Stacks | Non Fiction | 537.622 JOP (Browse shelf) | Available | A282969 | |
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Dhaka University Science Library General Stacks | Non Fiction | 537.622 JOP (Browse shelf) | Available | A282968 |
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537.622 IOP Physics of semiconductors / | 537.622 JAP Physics of semiconductor devices : | 537.622 JAP Physics of semiconductor devices : | 537.622 JOP The Physics of hydrogenated amorphous silicon / | 537.622 JOP The Physics of hydrogenated amorphous silicon / | 537.622 JOP Principles of semiconductor device operation. | 537.622 JUT Transport equations for semiconductors / |
Includes bibliographical references and indexes.
1. Structure, preparation, and devices -- 2. Electronic and vibrational properties.
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