Vol. 46 has treatise editors: R.K. Willardson, E.R. Weber.

Irregular.

Volume editors vary.

Place of publication varies.

Includes bibliographical references.

v. 1-2. Physics of III-V compounds.--v. 3. Optical properties of III-V compounds.--v. 4. Physics of III-V compounds.--v. 5. Infrared detectors.--v. 6. Injection phenomena.--v. 7. Applications and devices. 2 v.--v. 8. Transport and optical phenomena.--v. 9. Modulation techniques.--v. 10. Transport phenomena.--v. 11. Solar cells, by H. J. Hovel.--v. 12. Infrared detectors II.--v. 13. Cadmium telluride, edited by K. Zanio.--v. 14. Lasers, junctions, transport.--v. 15. Contacts, junctions, emitters.--v. 16. Defects, (HgCd)Se, (HgCd)Te.--v. 17. CW beam processing of silicon and other semiconductors.--v. 18. Mercury cadmium telluride.--v. 19. Deep levels, GaAs, alloys, photochemistry.--v. 20. Semi-insulating GaAs.--v. 21. Hydrogenated amorphous silicon, pt. A. Preparation and structure. pt. B. Optical properties. pt. C. Electronic and transport properties. pt. D. Device applications. 4 v.--v. 22. Lightwave communications technology, pt. A. Material growth technologies. pt. B. Semiconductor injection lasers, I. pt. C. Semiconductor injection lasers, II. Light-emitting diodes. pt. D. Photodetectors. pt. E. Integrated optoelectronics. 5 v.--v. 23. Pulsed laser processing of semiconductors.--v. 24. Applications of multiquantum wells, selective doping, and superlattices.--v. 25. Diluted magnetic semiconductors.--

v. 26. III-V compound semiconductors and semiconductor properties of superionic materials.--v. 27. Highly conducting quasi-one-dimensional organic crystals.--v. 28. Semiconductors and semimetals.--v. 29. Very high speed integrated circuits: Gallium Arsenide LSI.--v. 30. Very high speed integrated circuits: heterostructure.--v. 31. Semiconductors and semimetals.--v. 32. Strained-layer superlattices: physics.--v. 33. Strained-layer superlattices: materials science and technology.--v. 34. Semiconductors and semimetals.--v. 35. Nanostructured systems.--v. 36. Spectroscopy of semiconductors.-- v. 37. Mechanical properties of semiconductors.-- v. 38. Imperfections in III/V materials.--v. 39. Minority carriers in III-V semiconductors: physics and applications.--v. 41. High speed heterostructure devices-- 43. Semiconductors for room temperature nuclear detector applications -- 45. Effect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization --

v. 46. Effect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization -- v. 49. Light emission in silicon: from physics to devices -- v. 48. High brightness light emitting diodes -- v. 50. Gallium Nitride (GaN) I -- v. 51A-51B. Identification of defects in semiconductors (2 v.) -- v. 52. SiC materials and devices -- v. 53. Cumulative subject and author INDEX including tables of contents: VOLUMES 1-50 -- v. 54-55. High pressure in semiconductor physics (2 v.) -- v. 56. Germanium silicon: physics and materials -- v. 59. Nonlinear optics in semiconductors II --

v. 61. Hydrogen in semiconductors II -- 62. Intersubband transitions in quantum wells: physics and device applications I -- 63. Chemical mechanical polishing in silicon processing -- 64-65. Electroluminescence I-II (2 v.) -- 66. Intersubband transitons in quantum wells: ... [pt.] II -- v. 67. Ultrafast physical processes in semiconductors -- 68. Isotope effects in solid state physics -- 69-71. Recent trends in thermoelectric material research I-III. (3 v.) -- 72. Silicon epitaxy -- 73. Processing and properties of compound semiconductors