000 01388cam a2200337 a 4500
001 1182689
003 BD-DhUL
005 20140924161030.0
008 970912s1998 enka b 001 0 eng
010 _a 97041445
020 _a0198501595
040 _aDLC
_cDLC
_dDLC
_dBD-DhUL
050 0 0 _aQC611.8.C64
_bG74 1998
082 0 0 _a537.6223
_221
_bGRO
245 0 0 _aGroup III nitride semiconductor compounds :
_bphysics and applications /
_cedited by Bernard Gil.
246 3 _aGroup 3 nitride semiconductor compounds
246 3 _aGroup three nitride semiconductor compounds
260 _aOxford :
_bClarendon Press ;
_c1998.
300 _axvi, 170 p. :
_bill. ;
_c22 cm.
365 _aUS$
_b157.91
490 0 _aSeries on semiconductor science and technology ;
_v6
504 _aIncludes bibliographical references and index.
650 0 _aCompound semiconductors
_xMaterials.
650 0 _aGallium nitride
_xElectric properties.
700 1 _aGil, B.
_q(Bernard)
856 4 2 _3Publisher description
_uhttp://www.loc.gov/catdir/enhancements/fy0606/97041445-d.html
856 4 1 _3Table of contents only
_uhttp://www.loc.gov/catdir/enhancements/fy0606/97041445-t.html
906 _a7
_bcbc
_corignew
_d1
_eocip
_f19
_gy-gencatlg
942 _2ddc
_cBK
955 _apc20 to ja00 09-12-97; je43 09-12-97 to je08; 15Sep97 JE08 to SL ; je14 09-16-97 to dew.; CIP ver. jf03 to SL 07-31-98
999 _c12812
_d12812