| 000 | 01070cam a2200313 a 4500 | ||
|---|---|---|---|
| 001 | 4714920 | ||
| 003 | BD-DhUL | ||
| 005 | 20140924174330.0 | ||
| 008 | 830803s1984 gw a b 001 0 eng | ||
| 010 | _a 83016732 | ||
| 020 | _a0387128077 (U.S.) | ||
| 020 | _z0387128085 (U.S.) | ||
| 040 |
_aDLC _cDLC _dDLC _dBD-DhUL |
||
| 050 | 0 | 0 |
_aQC611.8.S5 _bP49 1984 |
| 082 | 0 | 0 |
_a537.622 _219 _bJOP |
| 245 | 0 | 4 |
_aThe Physics of hydrogenated amorphous silicon / _cJ.D. Joannopoulos and G. Lucovsky |
| 260 |
_aBerlin ; _aNew York : _bSpringer-Verlag, _c1984. |
||
| 300 |
_av. : _bill. ; _c24 cm. |
||
| 365 |
_aUS$ _b47.20 |
||
| 440 | 0 |
_aTopics in applied physics ; _vv. 55-56 |
|
| 504 | _aIncludes bibliographical references and indexes. | ||
| 505 | 1 | _a1. Structure, preparation, and devices -- 2. Electronic and vibrational properties. | |
| 650 | 0 | _aSilicon. | |
| 700 | 1 |
_aJoannopoulos, J. D. _q(John D.), _d1947- |
|
| 700 | 1 | _aLucovsky, G. | |
| 700 | 1 |
_aCarlson, D. E. _q(David Emil), _d1942- |
|
| 906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
||
| 942 |
_2ddc _cBK |
||
| 999 |
_c12855 _d12855 |
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