000 06436cam a2200781 i 4500
001 ocn881418299
003 OCoLC
005 20171029123641.0
006 m o d
007 cr |||||||||||
008 140613s2014 si a ob 001 0 eng
010 _a 2014023306
020 _a9781118313558
_q(ePub)
020 _a1118313550
_q(ePub)
020 _a9781118313541
_q(Adobe PDF)
020 _a1118313542
_q(Adobe PDF)
020 _a9781118313534
020 _a1118313534
020 _z9781118313527
_q(cloth)
020 _z1118313526
_q(cloth)
029 1 _aAU@
_b000053968126
029 1 _aCHBIS
_b010276077
029 1 _aCHBIS
_b010441668
029 1 _aCHVBK
_b332017850
029 1 _aCHVBK
_b334095247
029 1 _aDEBBG
_bBV042487457
029 1 _aDEBSZ
_b434828556
029 1 _aNLGGC
_b382545524
029 1 _aNZ1
_b15910066
029 1 _aDEBBG
_bBV043396915
035 _a(OCoLC)881418299
_z(OCoLC)902744442
_z(OCoLC)927507781
037 _aCL0500000549
_bSafari Books Online
040 _aDLC
_beng
_erda
_epn
_cDLC
_dYDX
_dOCLCF
_dN$T
_dE7B
_dDG1
_dYDXCP
_dMYG
_dIEEEE
_dCDX
_dRECBK
_dUMI
_dCOO
_dDEBBG
_dOCLCO
_dOCLCQ
_dEBLCP
_dB24X7
_dOTZ
_dOCLCQ
042 _apcc
049 _aMAIN
050 0 0 _aTK7871.15.S56
072 7 _aTEC
_x009070
_2bisacsh
082 0 4 _a621.3815/2
_223
100 1 _aKimoto, Tsunenobu,
_d1963-
245 1 0 _aFundamentals of silicon carbide technology : growth, characterization, devices and applications /
_cTsunenobu Kimoto, James A. Cooper.
_h[electronic resource]
246 3 0 _aFundamentals of SiC technology
264 1 _aSingapore :
_bWiley,
_c[2014]
300 _a1 online resource (xiv, 538 pages) :
_billustrations
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bn
_2rdamedia
338 _aonline resource
_bnc
_2rdacarrier
504 _aIncludes bibliographical references and index.
505 0 _a""Title Page""; ""Copyright""; ""About the Authors""; ""Preface""; ""Chapter 1: Introduction""; ""1.1 Progress in Electronics""; ""1.2 Features and Brief History of Silicon Carbide""; ""1.3 Outline of This Book""; ""References""; ""Chapter 2: Physical Properties of Silicon Carbide""; ""2.1 Crystal Structure""; ""2.2 Electrical and Optical Properties""; ""2.3 Thermal and Mechanical Properties""; ""2.4 Summary""; ""References""; ""Chapter 3: Bulk Growth of Silicon Carbide""; ""3.1 Sublimation Growth""; ""3.2 Polytype Control in Sublimation Growth""
505 8 _a""3.3 Defect Evolution and Reduction in Sublimation Growth""""3.4 Doping Control in Sublimation Growth""; ""3.5 High- Temperature Chemical Vapor Deposition""; ""3.6 Solution Growth""; ""3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition""; ""3.8 Wafering and Polishing""; ""3.9 Summary""; ""References""; ""Chapter 4: Epitaxial Growth of Silicon Carbide""; ""4.1 Fundamentals of SiC Homoepitaxy""; ""4.2 Doping Control in SiC CVD""; ""4.3 Defects in SiC Epitaxial Layers""; ""4.4 Fast Homoepitaxy of SiC""; ""4.5 SiC Homoepitaxy on Non-standard Planes""
505 8 _a""4.6 SiC Homoepitaxy by Other Techniques""""4.7 Heteroepitaxy of 3C-SiC""; ""4.8 Summary""; ""References""; ""Chapter 5: Characterization Techniques and Defects in Silicon Carbide""; ""5.1 Characterization Techniques""; ""5.2 Extended Defects in SiC""; ""5.3 Point Defects in SiC""; ""5.4 Summary""; ""References""; ""Chapter 6: Device Processing of Silicon Carbide""; ""6.1 Ion Implantation""; ""6.2 Etching""; ""6.3 Oxidation and Oxide/SiC Interface Characteristics""; ""6.4 Metallization""; ""6.5 Summary""; ""References""; ""Chapter 7: Unipolar and Bipolar Power Diodes""
505 8 _a""7.1 Introduction to SiC Power Switching Devices""""7.2 Schottky Barrier Diodes (SBDs)""; ""7.3 pn and pin Junction Diodes""; ""7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes""; ""References""; ""Chapter 8: Unipolar Power Switching Devices""; ""8.1 Junction Field-Effect Transistors (JFETs)""; ""8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)""; ""References""; ""Chapter 9: Bipolar Power Switching Devices""; ""9.1 Bipolar Junction Transistors (BJTs)""; ""9.2 Insulated-Gate Bipolar Transistors (IGBTs)""; ""9.3 Thyristors""; ""References""
505 8 _a""Chapter 10: Optimization and Comparison of Power Devices""""10.1 Blocking Voltage and Edge Terminations for SiC Power Devices""; ""10.2 Optimum Design of Unipolar Drift Regions""; ""10.3 Comparison of Device Performance""; ""References""; ""Chapter 11: Applications of Silicon Carbide Devices in Power Systems""; ""11.1 Introduction to Power Electronic Systems""; ""11.2 Basic Power Converter Circuits""; ""11.3 Power Electronics for Motor Drives""; ""11.4 Power Electronics for Renewable Energy""; ""11.5 Power Electronics for Switch-Mode Power Supplies""
520 _a"Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."--
_cPortion of summary from book.
588 0 _aPrint version record and CIP data provided by publisher.
650 0 _aSilicon carbide.
650 0 _aSemiconductors.
650 0 _aIntegrated circuits.
650 4 _aSilicon carbide.
650 7 _aTECHNOLOGY & ENGINEERING
_xMechanical.
_2bisacsh
650 7 _aIntegrated circuits.
_2fast
_0(OCoLC)fst00975535
650 7 _aSemiconductors.
_2fast
_0(OCoLC)fst01112198
650 7 _aSilicon carbide.
_2fast
_0(OCoLC)fst01118657
655 4 _aElectronic books.
700 1 _aCooper, James A.,
_d1946-
776 0 8 _iPrint version:
_aKimoto, Tsunenobu, 1963-
_tFundamentals of silicon carbide technology.
_dSingapore : John Wiley & Sons Singapore Pte. Ltd., [2014]
_z9781118313527
_w(DLC) 2014016546
_w(OCoLC)881406991
856 4 0 _uhttp://onlinelibrary.wiley.com/book/10.1002/9781118313534
_zWiley Online Library
942 _2ddc
_cBK
999 _c207533
_d207533