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005 20171026133523.0
006 m o d
007 cr |||||||||||
008 140729s2014 enk ob 001 0 eng
010 _a 2014030064
020 _a9781118958278
_q(ePub)
020 _a1118958276
_q(ePub)
020 _a9781118958261
_q(Adobe PDF)
020 _a1118958268
_q(Adobe PDF)
020 _a9781118958254
020 _a111895825X
020 _a1118447743
_q(cloth)
020 _a9781118447741
_q(cloth)
020 _a9781322317595
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020 _z9781118447741
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035 _a(OCoLC)884962060
_z(OCoLC)896800073
_z(OCoLC)900726008
_z(OCoLC)908280453
040 _aDLC
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049 _aMAIN
050 0 0 _aTK7874.84
072 7 _aTEC
_x009070
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082 0 0 _a621.381
_223
245 0 0 _aEmerging nanoelectronic devices /
_cedited by Dr An Chen, Dr James Hutchby, Dr Victor Zhirnov, Dr George Bourianoff.
_h[electronic resource]
264 1 _aChichester, West Sussex, United Kingdom :
_bWiley,
_c2014.
300 _a1 online resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bn
_2rdamedia
338 _aonline resource
_bnc
_2rdacarrier
504 _aIncludes bibliographical references and index.
505 0 _aEmerging Nanoelectronic Devices; Contents; Preface; List of Contributors; Acronyms; Part One: Introduction; 1. The Nanoelectronics Roadmap; 1.1 Introduction; 1.2 Technology Scaling: Impact and Issues; 1.3 Technology Scaling: Scaling Limits of Charge-based Devices; 1.4 The International Technology Roadmap for Semiconductors; 1.5 ITRS Emerging Research Devices International Technology Working Group; 1.5.1 ERD Editorial Team; 1.5.2 Vision and Mission; 1.5.3 Scope; 1.6 Guiding Performance Criteria; 1.6.1 Nanoinformation Processing; 1.6.2 Nanoelectronic Device Taxonomy.
505 8 _a1.6.3 Fundamental Guiding Principles -- ``Beyond CMOS ́ ́ Information Processing1.6.4 Current Technology Requirements for CMOS Extension and Beyond CMOS Memory and Logic Technologies; 1.7 Selection of Nanodevices as Technology Entries; 1.8 Perspectives; References; 2. What Constitutes a Nanoswitch? A Perspective; 2.1 The Search for a Better Switch; 2.2 Complementary Metal Oxide Semiconductor Switch: Why it Shows Gain; 2.3 Switch Based on Magnetic Tunnel Junctions: Would it Show Gain?; 2.3.1 Operation of an MTJ; 2.3.2 W-R Unit with Electrical Isolation; 2.3.3 Does This W-R Unit Have Gain?
505 8 _a2.4 Giant Spin Hall Effect: A Route to Gain2.4.1 Concatenability; 2.4.2 Proof of Gain and Directionality; 2.5 Other Possibilities for Switches with Gain; 2.5.1 All-spin Logic; 2.6 What do Alternative Switches Have to Offer?; 2.6.1 Energy-Delay Product; 2.6.2 Beyond Boolean Logic; 2.7 Perspective; 2.8 Summary; Acknowledgments; References; Part Two: Nanoelectronic Memories; 3. Memory Technologies: Status and Perspectives; 3.1 Introduction: Baseline Memory Technologies; 3.2 Essential Physics of Charge-based Memory; 3.3 Dynamic Random Access Memory.
505 8 _a3.3.1 Total Energy Required to Create/Maintain the Content of a Memory Cell3.3.2 DRAM Access Time (WRITE or READ); 3.3.3 Energy-Space-Time Compromise for DRAM; 3.4 Flash Memory; 3.4.1 Store; 3.4.2 Write; 3.4.3 Read; 3.4.4 Energetics of Flash Memory; 3.5 Static Random Access Memory; 3.5.1 SRAM Access Time; 3.5.2 SRAM Scaling; 3.6 Summary and Perspective; Appendix: Memory Array Interconnects; Acknowledgments; References; 4. Spin Transfer Torque Random Access Memory; 4.1 Chapter Overview; 4.2 Spin Transfer Torque; 4.2.1 Background of Spin Transfer Torque.
505 8 _a4.2.2 Experimental Observation of Spin Transfer Torque4.3 STT-RAM Operation; 4.3.1 Design of STT-RAM Cells; 4.3.2 Key Parameters for Operation; 4.4 STT-RAM with Perpendicular Anisotropy; 4.5 Stack and Material Engineering for Jc Reduction; 4.5.1 Dual Pinned Structure; 4.5.2 Nanocurrent Channel Structure Design; 4.5.3 Electric Field Assisted Switching; 4.6 Ultra-Fast Switching of MTJs; 4.7 Spin-Orbit Torques for Memory Application; 4.8 Current Demonstrations for STT-RAM; 4.9 Summary and Perspectives; References; 5. Phase Change Memory; 5.1 Introduction; 5.2 Device Operation.
520 _aEmerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh.
588 0 _aPrint version record and CIP data provided by publisher.
650 0 _aNanoelectronics.
650 0 _aNanoelectromechanical systems.
650 0 _aNanostructured materials.
650 4 _aNanoelectromechanical systems.
650 4 _aNanoelectronics.
650 4 _aNanostructured materials.
650 7 _aTECHNOLOGY & ENGINEERING
_xMechanical.
_2bisacsh
650 7 _aNanoelectromechanical systems.
_2fast
_0(OCoLC)fst01741807
650 7 _aNanoelectronics.
_2fast
_0(OCoLC)fst01741867
650 7 _aNanostructured materials.
_2fast
_0(OCoLC)fst01032630
655 4 _aElectronic books.
655 0 _aElectronic books.
700 1 _aChen, An
_c(Electronics engineer),
_eeditor.
700 1 _aHutchby, James,
_eeditor.
700 1 _aZhirnov, Victor V.,
_eeditor.
700 1 _aBourianoff, George,
_eeditor.
776 0 8 _iPrint version:
_tEmerging nanoelectronic devices.
_dChichester, West Sussex, United Kingdom : John Wiley & Sons, 2014
_z9781118447741
_w(DLC) 2014029299
856 4 0 _uhttp://onlinelibrary.wiley.com/book/10.1002/9781118958254
_zWiley Online Library
942 _2ddc
_cBK
999 _c207590
_d207590