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| 005 | 20150115122301.0 | ||
| 008 | 801003s1981 nyu b 001 0 eng | ||
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_aTK7871.99.M44 _bD38 |
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_a621.38152 _bA261i |
| 100 | 1 |
_aDavis, J. R. _q(John Richard), _d1951- |
|
| 245 | 1 | 0 |
_aInstabilities in MOS devices / _cJ. R. Davis. |
| 260 |
_aNew York : _bGordon and Breach Science Publishers, _cc1981. |
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| 300 |
_axv, 175 p. : _bill. ; _c23 cm. |
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| 490 |
_aElectrocomponent science monographs ; _vv. 12 |
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| 504 | _aIncludes bibliographical refererences (p. 151-175) and index. | ||
| 650 | 0 | _aMetal oxide semiconductors. | |
| 906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
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