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| 001 | 8011777 | ||
| 003 | BD-DhUL | ||
| 005 | 20150518131025.0 | ||
| 008 | 730305s1968 njuaf b 000 0 eng | ||
| 010 | _a 67013671 | ||
| 015 | _aGB67-18053 | ||
| 035 | _a(OCoLC)568543 | ||
| 040 |
_aDLC _cODaWU _dOCoLC _dUk _dDLC _dBD-DhUL |
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| 042 | _apremarc | ||
| 050 | 0 | 0 |
_aTK7874 _b.B8 |
| 082 |
_a621.381 _bBUF |
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| 245 | 0 | 0 |
_aFundamentals of silicon integrated device technology : _bvol. 2, Bipolar and unipolar transistors / _cedited by R.M. Burger and R.P. Donovan. |
| 260 |
_aEnglewood Cliffs, N.J. : _bPrintice- Hall, _cc1968. |
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| 300 |
_a v. : _bill. ; _c24 cm. |
||
| 365 |
_aGBP _b9.25 |
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| 490 | 0 | _aPrentice-Hall electrical engineering series | |
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _av. 1 Oxidation, diffusion, and epitaxy. v. 2. Bipolar and unipolar transistors. | |
| 650 | 0 | _aMicroelectronics. | |
| 650 | 0 | _aSilicon. | |
| 700 | 1 |
_aBurger, R. M. _q(Robert M.), _d1927- _eed. |
|
| 700 | 1 |
_aDonovan, R. P. _ejt. ed. |
|
| 942 |
_2ddc _cBK |
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| 999 |
_c32255 _d32255 |
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