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008 | 791005s1967 nyua b 000 0 eng | ||
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_aDLC _cDLC _dDLC _dBD-DhUL |
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_aTK7871.95 _b.C7 |
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_a621.381 _bCRM |
100 | 1 | _aCrawford, Robert H. | |
245 | 1 | 0 |
_aMosfet in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology / _c[by] Robert H. Crawford. |
260 |
_aNew York : _bMcGraw-Hill, _c[1967] |
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300 |
_axiii, 136 p. : _bill. ; _c26 cm. |
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365 |
_aGBP _b5.30 |
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490 | 0 | _aTexas Instruments electronics series | |
504 | _aIncludes bibliographies. | ||
650 | 0 | _aMetal oxide semiconductors field-effect transistors. | |
650 | 0 | _aTransistor circuits. | |
650 | 0 | _aMetal oxide semiconductors. | |
906 |
_a7 _bcbc _corignew _du _eocip _f19 _gy-gencatlg |
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