000 00956cam a22002771 4500
001 2171399
003 BD-DhUL
005 20150118103004.0
008 791005s1967 nyua b 000 0 eng
010 _a 67016301
040 _aDLC
_cDLC
_dDLC
_dBD-DhUL
050 0 0 _aTK7871.95
_b.C7
082 0 0 _a621.381
_bCRM
100 1 _aCrawford, Robert H.
245 1 0 _aMosfet in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology /
_c[by] Robert H. Crawford.
260 _aNew York :
_bMcGraw-Hill,
_c[1967]
300 _axiii, 136 p. :
_bill. ;
_c26 cm.
365 _aGBP
_b5.30
490 0 _aTexas Instruments electronics series
504 _aIncludes bibliographies.
650 0 _aMetal oxide semiconductors field-effect transistors.
650 0 _aTransistor circuits.
650 0 _aMetal oxide semiconductors.
906 _a7
_bcbc
_corignew
_du
_eocip
_f19
_gy-gencatlg
942 _2ddc
_cBK
999 _c32546
_d32546