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008			140804s2001 enka 001 0 eng
010			_a 2014395719
015			_aGBA0V2612 _2bnb
016	7		_a010350839 _2Uk
020			_a9780852967782
020			_a0852967780
035			_a(OCoLC)ocm45351181
040			_aUKM _beng _cUKM _dIXA _dC#P _dUNA _dBAKER _dYDXCP _dOCLCG _dSTF _dDEBBG _dOCLCO _dOCLCF _dDLC _dBD-DhUL
042			_alccopycat
050	0	0	_aQC611.8.S5 _bS77 2001
082	0	4	_a621.38152 _221
082	0	4	_a620.193 _221 _bSTR
084			_aRL 624 _2blsrissc
084			_aELT 329f _2stub
084			_aPHY 687f _2stub
084			_aUP 3150 _2rvk
245	0	0	_aStrained silicon heterostructures : _bmaterials and devices / _cedited by C.K. Maiti, N.B. Chakrabarti and S.K. Ray.
260			_aLondon : _bInstitution of Electrical Engineers, _cc2001.
300			_axii, 496 p. : _bill. ; _c25 cm.
365			_aUS$ _b92.07
490	1		_aIEE circuits, devices and systems series _v12
504			_aIncludes bibliographical references and index.
505	0		_aIntroduction -- Strained layer epitaxy -- Electronic properties of alloy layers -- Gate dielectrics on strained layers -- SiGe heterojunction bipolar transistors -- Heterostructure field effect transistors -- BICFET, RTD and other devices -- MODFETs -- Contact metallization on strained layers -- Si/SiGe optoelectronics.
650		0	_aHeterostructures.
650		0	_aSilicon.
650		7	_aHeterostructures. _2fast
650		7	_aSilicon. _2fast
650	0	7	_aHeterostruktur. _2swd
650	0	7	_aSilicium. _2swd
700	1		_aMaiti, C. K.
700	1		_aChakrabarti, N. B.
700	1		_aRay, S. K., _cDr.
710	2		_aInstitution of Electrical Engineers.
776	0	8	_iOnline version: _tStrained silicon heterostructures. _dLondon : Institution of Electrical Engineers, c2001 _w(OCoLC)606912463
830		0	_aIEE circuits, devices and systems series ; _v12.
906			_a7 _bcbc _ccopycat _d2 _encip _f20 _gy-gencatlg
942			_2ddc _cBK
955			_brl09 2014-08-04 z-processor _irl09 2014-08-29 ; to CALM
999			_c33065 _d33065